Two‐step barrier diodes

GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced δ-Doping

A GaN-based heterostructure barrier diode (HBD) similar to GaAs planar-doped barrier diodes is demonstrated. Instead of doping with impurities, the polarization-induced sheet charge at the III-nitride heterojunction behaves as an effective δ-doping. An AlGaN/GaN heterostructure is used for the demonstration. The rectifying characteristics of the polarizationinduced GaN HBDs can be tuned by cont...

AlGaN/GaN Schottky Barrier Diodes Employing Diamond-like Carbon passivation

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier

Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes

Charge and potential profiles are self-consistently calculated in double-barrier heterostmctures to derive the capacitance of resonant tunnelling devices. We show that the dipole charge integrated over the accumulation or the depletion side of the device is the result of a complex arrangement of the mobile charge dragged and drifted when a bias is applied. Excellent agreement is found with capa...

Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

Articles you may be interested in Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes Appl.